0.25/spl mu/m Contact Hole Filling by Al-Ge Reflow Sputtering

This paper reports submicron-contact-hole filling by Al-Ge reflow sputtering. it was conducted using a conventional DC magnetron sputter system without any substrate bias voltage. Among the conditions, it was found that deposition temperature, deposition rate, and underlayer material played important roles in improving step coverage. The electrical characteristics for contact holes filled with the Al-Ge are described.