Optimizing the performance of a solar cell based on new materials

This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is 0.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to 0.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = 10) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.