The avenue of FDSOI radiation hardening

Advanced FDSOI technology has inherent resistance to transient ionizing radiation effects and better Single Event Effect (SEE) tolerance. In the meantime, total dose hardening is now the biggest challenging for the cutting-edge FDSOI technology. Three TID hardening techniques are discussed in this paper. The effects of buried oxide modification, device structure innovation and biased Double SOI methods are shown and compared in detail. This discussion describes the most promising avenue to radiation hardened FDSOI devices and circuits.