Quantitative measurement of surface, trace metal contamination on SOS/SOI using total reflection X-ray fluorescence (TXRF)

Summary form only given. Total reflection X-ray fluorescence (TXRF) measurements of SIMOX material as implanted and after anneal are discussed. The data show that Ti, Cr, Mn, Fe, Ta, and Au metal contamination is present in the near surface region (3 nm) after the implantation, and that the anneal causes the metals to either evaporate (unexpected) or to diffuse into the SIMOX and decorate defects (expected). For purposes of illustration, if a metal on the surface with areal density of 10/sup 12/ atoms/cm/sup 2/ diffuses uniformly 100 nm deep, then the atom density in the 100 nm silicon film would be 10/sup 17/ atoms/cm/sup 3/. The TXRF technique is described and the quantification procedure outlined.<
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