High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

InGaAs junction field-effect transistors (JFETs) are fabricated in metalorganic chemical-vapor-deposition (MOCVD)-grown n-InGaAs and semi-insulating Fe:InP layers on n/sup +/-InP substrate with a P/Be co-implanted p/sup +/ self-aligned gate. The device exhibits a transconductance of 245 mS/mm (intrinsic transconductance of 275 mS/mm) at zero gate bias and good pinch-off behavior for a gate length of 0.5 mu m. The effective electron velocity is deduced to be 2.8*10/sup 7/ cm/s, equal to the theoretical prediction.<
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