Dielectric breakdown, reliability and defect density of (Ba/sub 0.7/Sr/sub 0.3/)TiO/sub 3/ (BST)

A thorough electrical characterization of BST with focus on lifetime, large device relevant areas (2/sub c/m/sup 2/) and defect density was carried out. As a result we think that BST with an SiO/sub 2/ equivalent thickness t/sub oxeq/ of 5 Å is able to meet the requirements of Gb DRAMs with ±1 V operating voltage.