Via-last/backside-via 3D integration using a visible-light laser debonding technique

A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.