Analysis of semiconductor nuclear radiation detectors with arbitrary electrode geometries

This paper develops a theoretical framework and sets of differential and integral equations for analyzing the operating characteristics of semiconductor nuclear radiation detectors with arbitrary electrode geometries. Results provide a basis for conceptualization and numerical calculations and are relevant to recent substantial improvements in detector performance achieved through various single-carrier charge collection schemes based on special electrode configurations. During the course of the work, the approach known as static charge analysis is extended to three dimensions and placed on a firmer theoretical basis.