Evaluating the performance of semiconductor radiation detectors through static charge analysis

This paper presents a new approach to analyzing semiconductor radiation detectors based on considering: (1) static charge when all free charge has been collected and (2) capacitances between electrodes and trapped charge within the crystal. It avoids any direct consideration of free charge motion in the detector. The validity of this "static charge" approach is established by using it to derive the Hecht equation. Its general usefulness is demonstrated by employing it to examine detectors with well-known alternative electrode geometries and obtaining useful new insight into their operating mechanisms. This new approach should provide a useful and intuitive visualization tool to aid in designing new detector configurations and establishing models for analysis of detectors with more complex geometries.