Side-poly technique for enhanced breakdown voltage of Trench-NPT-IGBT

In this paper, a brand-new Side-poly electrode is introduced to improve the peak electric field of the conventional Trench-NPT-IGBT. By providing an additional electric field opposite to the original one, the proposed structure is able to counteract the electric field concentration under the bottom of the trench, and therefore increases the breakdown voltage and reduces the threshold voltage at the same time. Meanwhile, the simulation results have shown that the new IGBT device mentioned above has a breakdown voltage increased by 90 Volts and a threshold voltage reduced by 0.63 Volts compared to the conventional Trench-NPT-IGBT.