Characterization of deep levels in 6H-SiC pn junction diodes

SiC bipolar n/sup +/p diodes of mesa types fabricated by nitrogen implantation or by epitaxy and passivated with a deposited oxide have been electrically characterized. C-V and I-V measurements have been made to analyze the quality of the junction. Deep level Transient Spectroscopy shows the presence of several hole traps in relatively high concentration (N/sub T//spl sim/0.01 N/sub A/). One trap located at E/sub v/+0.49 eV has been more precisely studied and is probably due to a hole trap created by the nitrogen implantation.