A wide band 215–255 GHz CB differential amplifier in a 0.25-μm SiGe HBT technology

A wideband amplifier operating beyond 200 GHz has been developed in a 0.25-μm SiGe HBT technology. The common-base (CB) amplifier consists of 5 differential stages and a pair of Marchand baluns to allow single-ended S-parameter measurement. The amplifier shows a flat gain over 215-255 GHz, leading to a 3-dB bandwidth of 40 GHz with a peak gain of 10 dB. It consumes a total DC power of 153 mW with a 1.5 V supply voltage. The fabricated chip occupies an area of 400 × 600 μm
²
including pads and baluns.