Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

The results of experimental researches of radiation resistance of element base of 0.35 µm CMOS integrated circuits under influence of Co
⁶⁰
gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC' elements (LOCOS and Shallow Trench Isolation — STI) on radiation variation of MOS transistors' parameters is carried out.