Reduction of baseband electrical memory effects using broadband active baseband load-pull

This paper presents an enhanced active baseband load-pull capability that allows constant, frequency independent baseband load environments to be presented across wide modulation bandwidths. This capability is critical in allowing the effects of baseband impedance variation has on the performance of nonlinear microwave devices, when are driven by broadband multi-tone stimuli, to be fully investigated. The experimental investigations were carried out using a 10W GaN HEMT device, under 9-carrier complex multi-tone excitation.