Low-power silicon BJT LNA for 1.9 GHz

A two-stage 1.9-GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3 dB and an associated gain of 15 dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2 mW from a 3-V supply including the bias circuitry. Input return loss and isolation are -9 and -20 dB, respectively.