${\hbox{In}}_{2} {\hbox{O}}_{3}$ Thin Film Paper Transistors

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide (In
₂
O
₃
) thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 μm thickness was used. In
₂
O
₃
thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to 6×10
⁴
, limited mainly by the gate leakage. The transfer characteristics -I
_d
(V
_gs
)- showed a memory effect with a threshold voltage of 0.8 V in “0” state and -3.6 V in “1” state. The drain current-voltage characteristics family -I
_d
(V
_ds
)- showed saturation currents up to 3.5 mA in “1”state and about 500 μA in “0” state. The subthreshold swing was 0.3-0.5 V/decade.