512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices

Single element 33×33 μm
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InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm
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/sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 μm band. A 48 μm pitch, 512 × 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.