Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required. In this letter, the nonlinearity parameter as a function of forming/SET current compliance in a MOSFET-integrated TiN/TiO
₂
/Ti/Pt ReRAM device is investigated. The nonlinearity parameter in the ReRAM device improves at the lower SET current compliance. This is due to scaling down the conductive filaments during the forming and the SET process. The nonlinearity is further increased by scaling down the oxide thickness that is accompanied by a reduction of the switching current.