Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies

We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.