Transient photoconductivity measurements of amorphous semiconductors by subnanosecond nitrogen lasers

Picosecond N
2
lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast rise-time preamplifier designed in this work provide this system with a high immunity to the background noise during the N
2
laser discharge.