Effects of breakdown on nondissipative current flow on the quantized hall resistance measurement in Si-MOSFET's

Experimental results for Si-MOSFET's indicate that breakdown of nondissipative current flow occurs at first in the vicinity of the source-drain electrodes. The effect of this inhomogeneous dissipative area on the value of the quantized Hall resistance is demonstrated to be less than a few parts in 10
⁷
when the diagonal resistivity ρ
xx
is sufficiently small. Measurement by the use of a Josephson potentiometer is possible even in the presence of an appreciable effect of the dissipative region on the shape of the Hall voltage plateau.