A novel gate-controlled bipolar operation of MOS transistors with floating-body

We propose that the gate-induced-drain-leakage (GIDL) current of n-MOS or p-MOS transistors fabricated on thin SOI (with floating-body) can be used as base current for turning on the parasitic lateral npn or pnp bipolar transistors. Desired device design for GIDL triggered lateral bipolar operation calls maximum GIDL current (by thin gate oxide and drain engineering), large lateral bipolar action (by short channel length and source engineering), appears consistent with future CMOS scaling trend. This new mode of lateral bipolar operation, utilizing two undesirable effects (i.e. GIDL and floating-body) under normal MOS operation, may potentially offer high performance due to reduced base resistance, minimum input capacitance, and small source and drain junction capacitance's. The gate-controlled lateral bipolar transistors can be fabricated together with normal MOS transistors on SOI and is promising for high speed and high frequency applications.