$\hbox{Ni/GeO}_{x}\hbox{/TiO}_{y}\hbox{/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

Excellent device-to-device distribution was achieved in high-performance Ni/GeO
x
/TiO
y
/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9 μA at 3 V; - 1μA at -3 V), 10
⁵
cycling endurance, and good retention at 85
^°
C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.