Microchip laser for microwave and millimeter-wave generation

A Nd:LiNbO/sub 3/ microchip laser operating at 1.084 /spl mu/m wavelength was designed, implemented, and characterized. The laser cavity was designed to have a free spectral range (FSR) of 20 GHz and an output optical power greater than 20 mW. By exploiting the electrooptical properties of the lithium niobate host, it was possible to mode-lock the microchip laser at 20 and 40 GHz. With this technique it was possible to optically generate the subcarrier with a high modulation index (95.6%).