A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

We report a forming-free and self-rectifying unipolar HfO
_x
based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>10
³
@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.