Microstructure and piezoelectric properties of c-BN Nano-films deposited on Si by RF sputtering for piezoelectric devices

In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness, while the highest cubic phase volume fraction appeared (about 95%) under bias voltage 120V. And the deposited c-BN films are of apparent piezoelectric properties both in plane and vertical direction by PFM figures.