Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs

A linear relation exists between the maximum forward gated-diode current I/sub d/ and the corresponding maximum charge pumping current I/sub cp/, in a hot-carrier stressed pMOSFET. I/sub d/ peak is further observed to shift by an amount equal to the shift in the rising edge of I/sub cp/. A close correspondence between the two currents is demonstrated.