1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

We demonstrate high-voltage depletion-mode and enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs) on a GaN-on-silicon-on-insulator (SOI) platform. The GaN-on-SOI wafer features GaN epilayers grown by metal-organic chemical vapor deposition on a p-type (111) Si SOI substrate with a p-type (100) Si handle wafer. Micro-Raman spectroscopy significantly reveals reduced stress in the GaN epilayers, which is a result expected from the compliant SOI substrate. E-mode HEMTs fabricated by fluorine plasma implantation technique deliver high on/off current ratio (10
⁸
-10
⁹
), large breakdown voltage (1471 V with floating substrate), and low on-resistance (3.92 mΩ·cm
²
).