Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

The charge-trapping characteristics of Ga
₂
O
₃
(Gd
₂
O
₃
) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al
₂
O
₃
/GGO/SiO
₂
/Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (2.2V at +8 V, 100 μs), and a better retention property (charge loss of 9.7% after 104 s at 125°C) mainly due to higher charge-trapping efficiency of the nitrided GGO film and the nitrogen-induced suppressed formation of the undesirable silicate interlayer at the GGO/SiO
₂
interface, as confirmed by the transmission electron microscopy and the X-ray photoelectron spectroscopy.