Measurement method for the large-signal admittance of mounted IMPATT diodes

The procedure employs a network analyzer and a computer optimization routine. An error network is introduced to account for drift of the measurement system and a second network is used to account for the mounted-diode parasitics. The measurement method is rapid and accurate, and is especially suitable when measurements are required at several frequencies. Typical large-signal admittance results, obtained for a Si IMPATT diode at several frequencies, are presented.