Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs

The semiconductor industry is placing increasing emphasis on emerging materials and devices that may provide solutions to end-of-the-CMOS-roadmap problems beyond 2020 [Table 1]. The remarkable electronic properties of graphene can lead to novel beyond-CMOS logic device concepts, such as the Bilayer pseudoSpin FET (BiSFET), which can potentially be an ultra-low power replacement for the MOSFET [1]. The BiSFET is based on many-body tunneling of an excitonic Bose condensate in double layer graphene [2]. One can also have single particle 2D-to-2D tunneling FETs based on the BiSFET architecture, with similar current-voltage behavior demonstrating negative differential resistance.