Optimization of SrTiO/sub 3/ for applications in tunable resonant circuits

A series of SrTiO/sub 3/ (STO) films have been grown at a wide range of deposition conditions in order to determine the optimal growth parameters to maximize ferroelectric tuning while maintaining the lowest dielectric losses. The deposition pressure of the ambient O/sub 2/ (40 mTorr

a(bulk) at higher pressures (P(dep)>65 mTorr). The dielectric constant (/spl epsiv//sub r/) and loss tangent (tan/spl delta/) were determined as a function of applied field at room temperature (300 K) and at liquid nitrogen temperature (77 K). The low frequency dielectric properties of the STO films were found to be a weak function of the strain of the ferroelectric film.