Boron diffusion in silicon using B+ solid source

Boron diffusion in Silicon using B+ solid source has been studied over the temperature range of 950-1150/spl deg/C in Nitrogen (N/sub 2/) ambient. The depth of the diffused layer was measured by a grooving method, and the diffusion profile was performed by using Spreading Resistance technique. The predeposition step in the diffusion process resulted in a constant surface concentration. The data is required to contribute to our wafer processing used for bipolar and MOS devices as well as for services in boron diffusion processing for anyone who required this process.