Influence of post-deposition annealing on metal-organic decomposed lanthanum cerium oxide film

Effects of post-deposition annealing was performed at different annealing temperatures (600, 800, and 1000°C) onto metal-organic decomposed lanthanum cerium oxide film spin-coated on Si substrate. X-ray diffraction analysis had detected four diffraction peaks of lanthanum cerium oxide in all of the investigated samples. Additional peak associated to lanthanum silicate (La
₂
Si
₂
O
₇
) was detected in sample annealed at 1000°C. Electrical properties of the samples were investigated and it was found that sample annealed at 1000°C demonstrated the best metal-oxide-semiconductor characteristics in terms of giving the highest breakdown voltage and lowest leakage current density. Detailed explanation regarding this acquisition was discussed.