Silicon Carbide Power Modules for High-Temperature Applications

A hermetic multichip power package for silicon carbide devices that will operate at 200
^°
C ambient and switch 50-100 A has been developed. The Al
₂
O
₃
/MoCu structure, in which the SiC junction field-effect transistors and diodes are attached, was designed to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding, and lid attach, as well as thermal modeling, electrical testing, and thermal cycling results are also described.