GaN-Based LEDs With Sapphire Debris Removed by Phosphoric Etching

The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H
₃
PO
₄
at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.