Differential signal transmission in silicon-photonics integrated circuit for high density optical interconnects

Differential signal transmission is demonstrated for high-density optical interconnects by a silicon-photonics integrated circuit, in which arrayed lasers, silicon optical modulators (Si-MODs) and germanium photodetectors (Ge-PDs) are integrated on a single silicon substrate. 3 dB gain of output signal-intensity was obtained and about 40 dB suppression of electrical cross-talk between a Si-MOD and a Ge-PD was obtained at GHz range. A lower bit-error-rate of data transmission and enhanced sensitivity of around 2 dB were achieved at 2 Gbps.