Low-dimensional quantum transport models in atomistic device simulations

The paper presents a method for atomistic quantum transport simulations in nanowire (NW) MOSFETs. The original tight-binding (TBM) Hamiltonian of the nanostructure is replaced with an approximate model which reproduces the transport properties at atomistic level. Small size of the equivalent model (EM) makes the atomistic transport simulation computationally cheap and allows the inelastic scattering effects to be incorporated easily. The method is applied to various p-SiNW and n-SiNW MOSFETs.