A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups

Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system's EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The electrical investigation concludes with a chart indicating the trade-off between turn-on switching loss versus dV/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6-in-1 IGBT module. The SMPS part of the developed test platform solution has been thermally analysed.