Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface

Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (R
_s
) and the effective barrier height (φ
_Bn
), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following parameters were found: n = 1.29, φ
^I-V
= 0.74eV and R
_s
= 120Ω as compared to the sample without interlayer (1.7-7.5, 0.8eV and 500Ω, respectively). The electronic properties of Si/GaAs(001) interface were determined from C-V and G-V measurements of Al/SiO
₂
/GaAs (001) MIS structure. It is shown that formation of Si/GaAs(001) interface allows reducing the density of surface states to ~(1-5)·10
¹¹
cm
^-2
eV
^-1
for Au/SiO
₂
/GaAs (001) MIS structure.