Effect of Crystalline Quality on Photovoltaic Performance for ${\rm In}_{0.17}{\rm Ga}_{0.83}{\rm As}$ Solar Cell Using X-Ray Reciprocal Space Mapping

This paper presents the In
_0.17
Ga
_0.83
As solar cell grown on misoriented GaAs substrate (2°- and 15
^°
-off) by metalorganic chemical vapor deposition. The crystalline quality of the In
_0.17
Ga
_0.83
As solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of In
_0.17
Ga
_0.83
As solar cell grown on 2°-off GaAs substrate is better than that of 15°-off GaAs substrate. Moreover, the photovoltaic performance of In
_0.17
Ga
_0.83
As solar cell grown on 2°-off GaAs substrate is found to be better than that of In
_0.17
Ga
_0.83
As solar cell grown on a 15°-off GaAs substrate, because the In
_x
Ga
_1-x
As epilayer grown on 15°-off GaAs substrate shows a large strain relaxation in the active layer of the solar cell. A large strain relaxation causes high dislocation density at the initial active layer/In
_x
Ga
_1-x
As graded layer interface for the solar cell grown on 15°-off GaAs substrate. The effect of dislocation defects on the solar cell performance can be alleviated using the p-i-n structure as the epilayer grown on 15°-off GaAs substrate.