Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs

We report on novel, high voltage InGaAs-InAlAs pHEMTs, which have been processed on an optimized epilayer and incorporate field-plate structures of different dimensions. Fabricated devices demonstrate great improvements in breakdown voltage and gate leakage, while keeping the same DC and RF behaviour with respect to baseline devices, i.e. with no field-plate implemented. In addition, the field plate strongly attenuates DC-to-pulse dispersion, making these devices suitable for high-power-density RF power amplifiers.