Piezoelectric effect in InGaAs/GaAs quantum wells grown on (111)A GaAs observed by photoluminescence spectroscopy

There has been considerable interest in the optical and electrical properties of InGaAs/GaAs strained quantum wells (SQW) grown on (111) oriented substrates because of the presence of a built-in electric field originating in the piezoelectric effect. If an external electric field opposite to the built-in electric field is applied, a blueshift of the optical transition energies can be observed. In this paper we report the observation of this blueshift by photoluminescence spectroscopy in In/sub 0.2/Ga/sub 0.8/As/GaAs SQWs grown on (111)A GaAs.