Profile analysis of a 0.25 /spl mu/m CMOS process

A complete set of doping profiles for a SEMATECH 0.25 /spl mu/m CMOS/DRAM model process were implanted into 200 mm wafers with a 9500/spl times/R implanter. The implants ranged in energy from 10 to 600 keV over a dose range from 7/spl times/10/sup 11/ to 3/spl times/10/sup 15/ ions/cm/sup 2/. The profiles were analyzed with an array of SIMS and SRP and junction staining techniques. Both as-implanted and annealed profiles were measured.