Monolithic narrow-band active inductors using suspended membrane passive components on silicon substrate

In this paper 8.8 GHz monolithic narrow-band active inductors based on the DIMES-03 silicon bipolar process are reported. Substrate losses have been reduced using micro-machined suspended membrane inductors and capacitors. Consequently, higher working frequencies and lower power consumption, than those obtainable using a standard bipolar process, have been realized. Better noise performance is predicted. The results are particularly attractive in low power and low noise circuits.