Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

The narrow-width
W
effect of metal-oxide-semiconductor field-effect transistors (MOSFETs) with shallow trench isolation technology has been widely reported. The factor of most concern is the edge width Δ
w
affecting the electrical characteristics of the MOSFETs. In this letter, the negative variation value of Δ
w
, as explained in the content, was derived from 65-nm node p-channel MOSFETs (pMOSFETs). To verify the validity of Δ
w
, the pMOSFETs were stressed by channel-hot-carrier stress conditions. According to the experimental results, the device parameter degradation, i.e., the threshold voltage
V
_TH
, was obviously dominated by |Δ
w
|/W, and the degradation of the narrow-width device was also increased for the wide width.