A high performance 16-Mb DRAM technology

A high performance 16-Mb DRAM technology is presented. The key issues that must be considered to achieve high yield and reduced cost are described. Technology elements include: deep trench capacitor node with thick oxide collar for improved packing density, variable-size shallow trench isolation (STI) for device performance and ease of integration, polysilicon surface strap to connect the capacitor node to the transfer device, and smoothed dep/etched phosphosilicate glass (PSG) passivation. The application of the above technology elements in conjunction with the MINT cell structure makes it possible to achieve a DRAM cell size of 4.13 μm
²
, using six 0.5-μm critical-dimension and 0.2-μm overlay lithography levels. Up to ten sequential process steps are performed in a single cluster. A 50-ns access time has been demonstrated