UV and Visible Electroluminescence From a $ \hbox{Sn:Ga}_{2}\hbox{O}_{3}/\hbox{n}^{+}\hbox{-Si}$ Heterojunction by Metal–Organic Chemical Vapor Deposition

A Sn-doped Ga
₂
O
₃
thin film was deposited on a n
⁺
-Si substrate by metal-organic chemical vapor deposition. The Ga
₂
O
₃
film was found to be amorphous-like and exhibited n-type conduction with Sn doping. Room-temperature electroluminescence was clearly observed from the Sn:Ga
₂
O
₃
/n
⁺
-Si diode, including an ultraviolet (UV) emission at ~ 370 nm, a yellow emission at ~ 580 nm, and a red emission at ~ 680 nm. The UV emission is assigned to the transition from Sn
_Ga
donor to the
V
_Ga
acceptor, whereas the visible emissions were assigned to be related to the dangling bond defects.