I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance

A new body-tied (BT) (I-gate) silicon-on-insulator transistor with comparable f_T and f_ as those of floating-body transistors and comparable analog performance as those of T-gate BT transistors is demonstrated. The structure is fabricated without process modifications by selectively blocking silicide formation and source/drain implant in a foundry technology.