A physically based compact model for eigenenergy in in rich In1−xGaxAs MOSFETs using modified Airy function approximation

We propose a compact model for calculating the quantized energy levels in InGaAs MOSFETs with Al
₂
O
₃
gate dielectric. The model is based on the modified Airy function approximation, originally developed for Si nano-MOSFETs. The parameters of the model are extracted from numerical results calculated by self-consistent solution of one-dimensional Schrödinger and Poisson equation including the effect of wave function penetration into the gate dielectric. It is found that the compact model parameters are not sensitive to the variations in the In content in the channel layer and to the substrate doping density. Therefore, constant values of the parameters are proposed for both electrons and holes.